SSG4842N 23a , 40v , r ds(on) 9 m ? n-ch enhancement mode power mosfet elektronische bauelemente 13-dec-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provi de low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe soic-8 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25c i d 23 a t a = 70c 19 a pulsed drain current 2 i dm 60 a continuous source current (diode conduction) 1 i s 2.9 a total power dissipation 1 t a = 25c p d 3.1 w t a = 70c 2.2 w operating junction & storage temperature range t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient (max.) 1 t Q 10 sec r ja 40 c / w steady state 80 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. sop-8 ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. a h b m d c j k f l e n g g s s s d d d d
SSG4842N 23a , 40v , r ds(on) 9 m ? n-ch enhancement mode power mosfet elektronische bauelemente 13-dec-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0 - - 5 v ds =24v, v gs =0, t j =55c on-state drain current 1 i d(on) 30 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 9 m v gs =10v, i d =23a - - 12 v gs =4.5v, i d =20a forward transconductance 1 g fs - 90 - s v ds =15v, i d =23a diode forward voltage v sd - 0.7 - v i s =2.3a, v gs =0 dynamic 2 total gate charge q g - 25 - nc i d =23a v ds =15v v gs =4.5v gate-source charge q gs - 6 - gate-drain charge q gd - 9 - turn-on delay time t d(on) - 20 - ns v dd =15v i d =1a v gen =10v r l =6 rise time t r - 13 - turn-off delay time t d(off) - 82 - fall time t f - 43 - notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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